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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION With TO-3PML package Complement to type 2SD2494 APPLICATIONS Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Maximum absolute ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Collector-emitter voltage Emitter-base voltage IN Collector current ANG CH EMIC ES Open base Open collector DUC ON VALUE -110 TOR UNIT V V V A A W ae ae -110 -5 -6 -1 Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -55~150 1 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-5m A IC=-5 A;IB=-5m A VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 5000 100 110 MIN -110 2SB1625 SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -2.5 -3.0 -100 -100 |I |I V V A A MHz pF Switching times ton ts tf Turn-on time Storage time Fall time hFE classifications O 5000-12000 HAN INC P 6500-20000 SEM GE Y IC=-5A;RL=6| IB1=-IB2=-5mA VCC=-30V OND IC TOR UC 1.1 |I 3.2 1.1 |I s |I s s 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1625 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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